| 摘要 |
PURPOSE: A chemical mechanical polishing(CMP) slurry composition is provided to reduce the etching speed to a metal wiring while maintaining the polishing speed of the composition, and to reduce the erosion and the dishing while maintaining the tungsten removal time. CONSTITUTION: A chemical mechanical polishing(CMP) slurry composition contains ultrapure water, an abrasive, an oxidizer, and a corrosion inhibitor. The corrosion inhibitor is either phosphoric acid or phosphoric acid salt. The abrasive contains 0.01~15wt% of metal oxide selected from the group consisting of silica, alumina, ceria, zirconia, and titania. The phosphoric acid salt is selected from the group consisting of potassium monohydregen phosphate, dibasic potassium phosphate, monoammonium phosphate, and others.
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