METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

PURPOSE: A method of manufacturing a thin film transistor substrate is provided to increase the deposition rate of a semiconductor layer. CONSTITUTION: An oxide semiconductor layer(40) is formed on an insulating substrate(10) using AC sputtering. Both electrodes of an AC power unit are respectively connected to the first and second targets. A gate electrode(26) is overlapped with the oxide semiconductor layer. A gate insulating layer(30) is interposed between the oxide semiconductor layer and the gate electrode. A protective film(70) is formed on the oxide semiconductor layer and the gate electrode.