| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to minimize a leakage current which is generated in the interface between a silicon substrate and the depletion region of a photo diode by electrically separating a photo diode region and a lower electrode. CONSTITUTION: A readout circuit is formed on a first substrate. A wiring is electrically connected to the readout circuit. A lower electrode(153) is electrically connected to the wiring. A plurality of first conductive type ion implantation regions(240) are formed on the bottom electrode. An upper electrode(180) is formed by being separated from the first conductive ion implantation region.
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