| 摘要 |
PURPOSE: A method for manufacturing a vertical type image sensor is provided to improve the sensitivity and the illuminance of the vertical type image sensor by reducing the crystal defect of a substrate through a deuterium annealing process. CONSTITUTION: An insulating layer(110) including a metal wiring(112) and a contact plug(116) is formed on a first substrate. A second substrate including an image sensor is bonded to the upper side of the insulating layer. A trench is formed in the second substrate. A first material layer(400) is formed on the image sensor and the insulation layer. A second material layer(500) is formed on the first material layer. The crystal defects which are generated in a trench formation process are overcome by performing a deuterium annealing process.
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