| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to remove by-products which are generated while a metal pad is opened by oxidizing a part of the surface of an aluminum metal pad and removing the oxidized surface of the metal pad. CONSTITUTION: An interlayer insulating film(11) including a metal wiring is formed on a semiconductor substrate. A color filter(30) and a planarization layer(40) are formed on the interlayer insulating film. The metal wiring is exposed by etching the interlayer insulating layer and the planarization layer. An oxide layer is formed on the surface of the metal wiring. The oxide layer is removed.
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