| 摘要 |
FIELD: physics. ^ SUBSTANCE: in compliance with proposed method, high-alloy p-conductivity layer is produced on one side of silicon plate with its intrinsic conductivity. Thickness of the intrinsic conductivity layer on opposite side of working plate is reduced to produce high-alloy n-conductivity layer thereon. Mesa-structures are formed and side surfaces of the latter are protected by passivating glass. Ohmic contact are formed and working plate is divided into crystals. Side of working plate intended for producing high-alloy p-conductivity layer is preliminary polished. Then p-conductivity impurity is implanted in polished side of aforesaid high-alloy p-conductivity layer. Thickness of the layer with intrinsic conductivity is reduced by grinding for layer surface to be provided with fluid diffusant with n-conductivity impurity applied thereon, and this side of silicon working plate is brought in contact with the polished and coated with similar diffusant side of silicon plate-carrier. Heating in producing high-alloy n-conductivity layer by diffusion alloying is performed at preset temperature and time with simultaneous drive-in diffusion in high-alloy layer of p-conductivity, by forming appropriate silicate glassy film on high-alloy p- and n-conductivity layers and by jointing working silicon plate with silicon plate-carrier. Formation of mesa-structures is carried on the side of high-alloy p-conductivity layer with depth to high-alloy n-conductivity layer. Ohmic contacts on top of mesa-structures are formed to high-alloy p-conductivity layer, and, prior to forming common Ohmic contact, silicon-plate carrier is removed as well as appropriate silicate glassy film. ^ EFFECT: increased breakdown voltage at low reverse current, operation of diodes at low frequencies with no signal distortion, higher efficiency and reliability. ^ 2 cl, 15 dwg, 2 ex |
