发明名称 METHOD OF SEMICONDUCTOR STRUCTURE FORMATION
摘要 FIELD: electricity. ^ SUBSTANCE: method of semiconductor structure formation involves cultivation of epitaxial layer on original plate using source plate in the mode of chemical semiconductor transfer in halogen-containing hydrogen medium from plates to adjoining plates over a gap at minimum reactant flow or in still medium. ^ EFFECT: reduced cost of epitaxial structure manufacturing for integral schemes, discrete instruments, including solar cells. ^ 3 cl, 4 dwg
申请公布号 RU2393585(C1) 申请公布日期 2010.06.27
申请号 RU20090115834 申请日期 2009.04.28
申请人 ZAO "EHPIEHL" 发明人 VOLKOV ANDREJ FEDOTOVICH;KOZIKHIN VLADIMIR VIKTOROVICH;SOKOLOV EVGENIJ MAKAROVICH;STATSENKO VLADIMIR NIKOLAEVICH;STEPCHENKOV VIKTOR NIKOLAEVICH;SHVARTS KARL-GENRIKH MARKUSOVICH
分类号 H01L21/76 主分类号 H01L21/76
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