发明名称 CHEMICAL VAPOR DEPOSITION REACTOR
摘要 <p>A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.</p>
申请公布号 KR20100070333(A) 申请公布日期 2010.06.25
申请号 KR20107006204 申请日期 2008.10.09
申请人 VALENCE PROCESS EQUIPMENT, INC. 发明人 BEGARNEY MICHAEL J.;CAMPANALE FRANK J.
分类号 H01L21/205;C23C16/00;C23C16/44;H01L21/02 主分类号 H01L21/205
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