发明名称 |
CHEMICAL VAPOR DEPOSITION REACTOR |
摘要 |
<p>A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.</p> |
申请公布号 |
KR20100070333(A) |
申请公布日期 |
2010.06.25 |
申请号 |
KR20107006204 |
申请日期 |
2008.10.09 |
申请人 |
VALENCE PROCESS EQUIPMENT, INC. |
发明人 |
BEGARNEY MICHAEL J.;CAMPANALE FRANK J. |
分类号 |
H01L21/205;C23C16/00;C23C16/44;H01L21/02 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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