MULTI-LEVEL CELL FLASH MEMORY DEVICE AND READING METHOD THEREOF

摘要

PURPOSE: A multi-level cell flash memory device and a reading method thereof are provided to reduce a time required for a program by executing the program of all bit lines at the same time. CONSTITUTION: A row decoder(110) selects one of memory blocks in response to an address received from an input-output part(140). A row decoder(150) is controlled by a controller and activates the rows of a selected memory block. A column decoder and sensing unit(130) transmits the data stored in a page buffer to an input-output unit or controller in response to the address supplied to the input-output unit. A LSB [least significant bit] of programmed data in the memory cells of the flash memory device is read out. The MSB [most significant bit] of programmed data in the memory cells of the flash memory device is read out.