发明名称 |
TRANSISTOR DIELECTRIC RUPTURE TYPE ANTI-FUSE UTILIZING CHISEL OR CHISHL, AND PROGRAM CIRCUIT HAVING IT |
摘要 |
<p>PURPOSE: A transistor dielectric rupture type anti-fuse utilizing chisel or CHISHL, and program circuit having it are provided to program data under low voltage by destructing a dielectric adjacent to a drain of a transistor. CONSTITUTION: A substrate(15) has a first conductivity type. A source(13) and drain(14) have a second conductive type and are separated from a predetermined domain within a substrate. A dielectric(12) is formed between source and drain on the top of substrate. The transistor comprises a gate(11) formed on the top of the dielectric. The dielectric between the gate and the substrate which is adjacent to the drain is destroyed.</p> |
申请公布号 |
KR20100070157(A) |
申请公布日期 |
2010.06.25 |
申请号 |
KR20080128771 |
申请日期 |
2008.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, KIW HAN;TAK, NAM KYUN |
分类号 |
G11C16/34;G11C16/10;G11C16/12;G11C29/04 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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