发明名称 TRANSISTOR DIELECTRIC RUPTURE TYPE ANTI-FUSE UTILIZING CHISEL OR CHISHL, AND PROGRAM CIRCUIT HAVING IT
摘要 <p>PURPOSE: A transistor dielectric rupture type anti-fuse utilizing chisel or CHISHL, and program circuit having it are provided to program data under low voltage by destructing a dielectric adjacent to a drain of a transistor. CONSTITUTION: A substrate(15) has a first conductivity type. A source(13) and drain(14) have a second conductive type and are separated from a predetermined domain within a substrate. A dielectric(12) is formed between source and drain on the top of substrate. The transistor comprises a gate(11) formed on the top of the dielectric. The dielectric between the gate and the substrate which is adjacent to the drain is destroyed.</p>
申请公布号 KR20100070157(A) 申请公布日期 2010.06.25
申请号 KR20080128771 申请日期 2008.12.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, KIW HAN;TAK, NAM KYUN
分类号 G11C16/34;G11C16/10;G11C16/12;G11C29/04 主分类号 G11C16/34
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