QUARTZ GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a quartz glass crucible capable of preventing the formation of a cavity defect caused by taking bubbles of SiO gas into a silicon single crystal.

SOLUTION: The quartz glass crucible 10 is equipped with an outer layer 11 which consists of a natural quartz glass layer and an inner layer 12 which consists of a synthetic quartz glass layer, wherein the synthetic quartz glass layer includes a first synthetic quartz glass layer 12a which is formed in the range from the center of the crucible bottom to 50% or less of the crucible caliber and a second synthetic quartz glass layer 12b which is formed in the range except the formation range of the first synthetic quartz glass layer 12a. The first synthetic quartz glass layer 12a has a thickness of 0.5-1.5 mm and the concentration of OH radical contained in the first synthetic quartz glass layer 12a is 100 ppm or less. When the synthetic quartz layer is composed to be as thin as possible like this and at a high viscosity, a depression of the inner surface of the crucible bottom is prevented and the generation of bubbles is suppressed.

COPYRIGHT: (C)2010,JPO&INPIT