| 摘要 |
PROBLEM TO BE SOLVED: To improve radiation performance of a radiator for a semiconductor device, while controlling the increase in the pressure drop. SOLUTION: The radiator includes: a casing 20, provided with an ingress and egress for a coolant; an insulating substrate 24 prepared on one outer surface of the casing 20, to which an IGBT 17 (insulated gate bipolar transistor) is attached; and a corrugated fin 30, whose respective apices are joined to the inner surface of the side opposite to the one where the casing 20s insulating substrate 24 is attached, which prescribes the coolant flow passage 37, wherein as to the corrugation fin 30, the direction in which each apex extends is a straight line, that part corresponding to the part of the casing 20, to which the insulating substrate 24 is attached is divided into two or more blocks 31a to 31b and 32a to 32c, in a direction in which the coolant flows by a slit 34 set up at right angle with the direction in which the coolant flows, and the corrugated fin 30 of respective adjoining blocks is arranged so that its pitch is shifted in a right angle direction with the direction in which the coolant flows. COPYRIGHT: (C)2010,JPO&INPIT |
