METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an LaO film is etched with high precision to leave an LaO film in a predetermined region in a microstructure like a CMOS semiconductor device after hp45 nm. Ž<P>SOLUTION: The method of manufacturing the semiconductor device having a high-k gate insulating film/metal gate structure includes the processes of: forming a high-k material film and an LaO film in order on a semiconductor substrate; forming a mask layer on the LaO film so as to cover the predetermined region; selectively etching the LaO film away using the mask layer; and thermally diffusing the LaO film in the high-k material film after removing the mask layer, wet etching being carried out selectively on the LaO film in the etching process using an acidic aqueous solution with pH4-6.8. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž