发明名称 |
TECHNIQUE FOR FABRICATION OF BACKSIDE ILLUMINATED IMAGE SENSOR |
摘要 |
An array of backside illuminated image sensors is fabricated using a number of processes. These processes include fabricating front side components of the backside illuminated image sensors into or onto a first side of an epitaxial layer disposed over a substrate layer. Dopants are diffused from the substrate through a second side of the epitaxial layer to create a dopant gradient band in the epitaxial layer adjacent to the substrate layer. The backside of the array is then thinned to remove the substrate layer while retaining at least a portion of the dopant gradient band in the epitaxial layer.
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申请公布号 |
US2010159632(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20080342973 |
申请日期 |
2008.12.23 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
RHODES HOWARD E.;TAI HSIN-CHIH |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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