| 摘要 |
A CMOS solid state imaging device capable of achieving a higher image quality while reducing the size and power consumption and increasing the number of pixels and speeds. The CMOS solid state imaging device includes a light-receiving portion that performs photoelectric conversion according to a quantity of received light, a transfer gate used to read out charges obtained through the photoelectric conversion in the light-receiving portion, and a peripheral transistor in a periphery of the light-receiving portion. A voltage applied to the transfer gate is set higher than a voltage applied to the peripheral transistor.
|
