发明名称 |
DEPLETION MODE BANDGAP ENGINEERED MEMORY |
摘要 |
Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays and methods of operation.
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申请公布号 |
US2010155823(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20100720112 |
申请日期 |
2010.03.09 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUE HANG-TING;WANG SZU-YU |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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