| 摘要 |
PURPOSE: A semiconductor device including an insulation layer and a manufacturing method thereof are provided to prevent a metal film like a metal silicide to reduce contact resistance from oxidizing due to steaming using a SiON layer containing more oxygen than nitrogen as a liner layer. CONSTITUTION: A SiON layer(10) contains more oxygen than nitrogen and consecutively covers the inner surfaces of groove regions(109). A SiO2 layer(11) is formed by reforming polysilazane and is filled in the groove regions while interposing the SiON layer between the SiO2 layer and the groove regions.
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