ETCHING METHOD, ETCHING MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

An etching method forms a metal-fluoride layer at a temperature of 150° C. or higher at least as a part of an etching mask formed over a semiconductor layer; patterns the metal-fluoride layer; and etches the semiconductor layer using the patterned metal-fluoride layer as a mask. According to the etching method, an etching-resistant semiconductor layer such as a Group III-V nitride semiconductor can be easily etched by a relatively simpler process.