发明名称 METHOD OF FORMING CORE-SHELL TYPE STRUCTURE AND METHOD OF MANUFACTURING TRANSISTOR USING THE SAME
摘要 <p>PURPOSE: A core-shell type structure formation method and a transistor manufacturing method using the same are provided to form a core shell structure into a desired form and at a desired place using a top down mode semiconductor manufacturing process. CONSTITUTION: An area in which a core-shell structure is formed on a substrate is appointed. A groove(26) is formed on the substrate. A first shell layer(28) covers the surface of the groove and is formed on the substrate. A core(34) is formed on the groove. A second shell layer(36), which covers the core, is formed.</p>
申请公布号 KR20100069490(A) 申请公布日期 2010.06.24
申请号 KR20080128183 申请日期 2008.12.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, KI HA;PARK, KYOUNG WON;SHIN, JAI KWANG;KIM, JONG SEOB;CHOI, HYUK SOON
分类号 H01L21/20;H01L21/336;H01L29/78 主分类号 H01L21/20
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