发明名称 |
METHOD OF FORMING CORE-SHELL TYPE STRUCTURE AND METHOD OF MANUFACTURING TRANSISTOR USING THE SAME |
摘要 |
<p>PURPOSE: A core-shell type structure formation method and a transistor manufacturing method using the same are provided to form a core shell structure into a desired form and at a desired place using a top down mode semiconductor manufacturing process. CONSTITUTION: An area in which a core-shell structure is formed on a substrate is appointed. A groove(26) is formed on the substrate. A first shell layer(28) covers the surface of the groove and is formed on the substrate. A core(34) is formed on the groove. A second shell layer(36), which covers the core, is formed.</p> |
申请公布号 |
KR20100069490(A) |
申请公布日期 |
2010.06.24 |
申请号 |
KR20080128183 |
申请日期 |
2008.12.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG, KI HA;PARK, KYOUNG WON;SHIN, JAI KWANG;KIM, JONG SEOB;CHOI, HYUK SOON |
分类号 |
H01L21/20;H01L21/336;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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