| 摘要 |
<p>PURPOSE: A lithography apparatus and a lithography method are provided to accurately compensate the property deviation of a pattern feature by implementing a phase distribution with high resolution. CONSTITUTION: Information related to the property deviation of a pattern feature is collected(2). A phase change to be applied to a radiation beam used for entirely or partially compensating the property deviation and applying the pattern feature to the substrate is determined(4). When applying the pattern feature to the substrate, the required phase change of the part of the radiation beam is implemented to entirely or partially compensate the property deviation(6). The phase modulation element is illuminated with the entire or part of the radiation beam when the phase modulation element is a required composition.</p> |
