| 摘要 |
<p>PURPOSE: A top emission type organic electro luminescent device and a method of fabricating the same are provided to prevent the deterioration of image quality due to partial brightness uniform by reducing the internal resistance of a second electrode. CONSTITUTION: A semiconductor layer, comprising of a driving area(DA), a first area(113a) and a semiconductor layer(113), is formed on the first top of a substrate. A gate insulating layer(116) is formed over the semiconductor. A gate electrode(120) is formed on the gate insulating layer. A switching thin film transistor and driving thin-film transistor are formed in a pixel region(P) on a first substrate. A drain contact hole(143) exposes the drain electrode(136) of the driving thin-film transistor to the outside.</p> |
