| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to boost the active area of a semiconductor substrate by forming a metal layer and a dielectric layer in the active area of the semiconductor substrate and the sidewall of a gate pattern. CONSTITUTION: A tunnel insulating layer(101), a conductive film(102) for a floating gate, and a dielectric film(103) are formed successively on a semiconductor substrate(100). A control gate conductive layer(104) is formed on the dielectric film. A metal gate film(105) is formed on the control gate conductive layer. A gate pattern is formed by etching the dielectric film and the conductive film for a floating gate. A second dielectric film(109) and a metal layer(110) are formed on the upper part of the semiconductor substrate and the gate pattern.</p> |
