| 摘要 |
PURPOSE: A precharge circuit and a semiconductor memory device including the same are provided to minimize the area of an additional circuit by forming a precharge circuit of a semiconductor device controlling a precharge voltage level of a local line. CONSTITUTION: A precharge voltage supply unit(410) supplies a normal precharge voltage. The precharge voltage supply unit supplies over precharge voltage for an overdriving area of a bit line. A precharging unit(420) precharges a data line with an over precharge voltage and a normal precharge voltage supplied to a precharge voltage supply unit. The over precharge voltage supply unit supplies the over precharge voltage for an over driver signal is enable determining an over driving period of a bit line. A normal precharge voltage supply unit supplies the normal precharge voltage for the over drive is disable.
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