| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon epitaxial wafer, in which the yield is improved in a post-process by preventing an SF from occurring in an epitaxial layer and effectively reducing the Cu concentration in a substrate. SOLUTION: Provided is the method of manufacturing the silicon epitaxial wafer, in which a diffusion thermal treatment is applied to a silicon single-crystal substrate and the epitaxial layer is grown on a surface of the silicon single-crystal substrate having been subjected to the diffusion thermal treatment, wherein the surface of the silicon single-crystal substrate is etched after holding the silicon single-crystal substrate having been subjected to the diffusion thermal treatment as it is at room temperature for seven days or longer, and then growing the epitaxial layer. COPYRIGHT: (C)2010,JPO&INPIT
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