| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is excellent in characteristics of a memory cell. SOLUTION: In the nonvolatile semiconductor memory device, a tunnel insulating layer 12, a charge storage layer 13 and a charge block layer 14 are formed on a silicon substrate 11 in this order, and a plurality of control gate electrodes 15 are provided above the charge block layer 14. The charge block layer 14 is made of metal oxide having a larger relative dielectric constant than a silicon nitride, and the control gate electrode 15 is made of metal, metal silicide, or silicon containing a dopant. Alternatively, the charge block layer 14 is made of silicon oxide or silicon nitride, and the control gate electrode 15 is made of metal or a metal silicide. Then a cap layer 20 made of silicon nitride is formed between the charge block layer 14 and each control gate electrode 15. COPYRIGHT: (C)2010,JPO&INPIT |
