发明名称 |
Metal High-K (MHK) Dual Gate Stress Engineering Using Hybrid Orientation (HOT) CMOS |
摘要 |
A hybrid orientation technology (HOT) CMOS structure is comprised of a tensile stressed NFET gate stack and a compressively stressed PFET gate stack, where each gate stack is comprised of a high dielectric constant oxide/metal, and where the source of the stress in the tensile stressed NFET gate stack and the compressively stressed PFET gate stack is the metal in the high-k metal gate stack.
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申请公布号 |
US2010159684(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20100706882 |
申请日期 |
2010.02.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;NARASIMHA SHREESH;NARAYANAN VIJAY;SLEIGHT JEFFREY W. |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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