| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device and to reduce manufacturing costs. Ž<P>SOLUTION: The semiconductor device includes a collector layer 2A, a base layer 3A and an emitter layer 4A laminated in order on a semiconductor substrate 1, a first stress source film 15A provided on the side surface of the collector layer 2A and applying strain stress to the collector layer, and a second stress source film 17 provided on the side surface of the base layer 3A and applying strain stress to the base layer 3A. The upper end of the first stress source film 15A and the upper end of the base layer are disposed at the same height from the surface of the semiconductor substrate, and the second stress source film 17 is provided between the side surface of the base layer 3A and the side surface of the first stress source film 15A. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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