| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that, although a technology is known by which a polycrystal silicon layer of a small particle size is formed at the time of depositing a silicon layer and only a wanted region is irradiated with a CW laser for an increased size of a particle as a technology for creating a polycrystal silicon layer of a small particle size and a polycrystal silicon layer of a large particle size at the same time, the technology requires such a process with hydrogen for imbedding ab unpaired electron in the polycrystal silicon layer of a small particle size left alone, thus requiring a longer hour necessary for a manufacturing process. Ž<P>SOLUTION: A silicon nitride layer 312 is formed on a substrate 310 which partially contains a metal layer 311, and a silicon oxide layer 313 is formed on the silicon nitride layer 312 which is irradiated with a pulse laser. Since a polycrystal silicon layer of a small particle size and a polycrystal silicon layer of a large particles size are formed in such a manner as being swapped with each other according to layer thickness of the silicon oxide layer 313, the polycrystal silicon layer of a small particle size and the polycrystal silicon layer of a large particle size can be formed at the same time. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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