| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a single crystal aluminum nitride large in diameter and thick in thickness. <P>SOLUTION: The method includes steps of: [A] placing an inorganic single crystal substrate close to a raw material containing aluminum nitride and a compound oxide or a compound oxynitride containing aluminum and at least one kind of element selected from rare earth and alkaline earth metal elements, or a raw material containing aluminum nitride and raw material substances of the above compound oxide or compound oxide nitride (excluding aluminum nitride); [B] controlling the raw material temperature to 1,600 to 2,000°C in a nonoxidative gas atmosphere at not lower than 0.9×10<SP>5</SP>Pa, as well as controlling the temperature of the inorganic single crystal substrate to be ≥1,580°C and lower than the temperature of the raw material; and [C] forming single crystal aluminum nitride on the inorganic single crystal substrate while keeping the raw material temperature at 1,600 to 2,000°C in a non-oxidative gas atmosphere of not lower than 0.9×10<SP>5</SP>Pa as well as keeping the temperature of the inorganic single crystal substrate to be equal to or higher than 1,580°C and lower than the temperature of the raw material. <P>COPYRIGHT: (C)2010,JPO&INPIT |
