| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a wide margin of the depth of focus upon exposure for forming a resist pattern, and to form a resist pattern in a desired shape on a resist undercoat film. <P>SOLUTION: A method for forming a resist pattern is provided, comprising: preparing a substrate on which a resist undercoat film having a hydroxyl groups at least on the film surface is formed; treating the substrate for eliminating or reducing hydroxyl groups from the surface of the resist undercoat film by forming a layer containing vinyl ethers on the surface of the resist undercoat film; then cleaning off the vinyl ethers; forming a resist film on the surface of the resist undercoat film after the treatment; and subjecting the resist film to at least exposure and development. <P>COPYRIGHT: (C)2010,JPO&INPIT |
