SLURRY AND POLISHING SOLUTION SET, SUBSTRATE, SUBSTRATE POLISHING METHOD USING CHEMICAL MECHANICAL POLISHING SOLUTION (CMP) OBTAINED FROM THE POLISHING SOLUTION SET

摘要

PROBLEM TO BE SOLVED: To provide a slurry containing a tetravalent metal hydroxide improved in variation in handling operability, usable period of time, and polishing speed, a polishing solution set containing the slurry and an additive solution, and a substrate polishing method using a CMP solution obtained by mixing the polishing solution set with respect to a CMP technology to flatten a shallow-trench separated insulating film, a premetal insulating film, an interlayer insulating film, and the like.

SOLUTION: The polishing solution set comprises the slurry containing water and a tetravalent metal hydroxide, and the additive solution containing water and an additive agent. This solution set is mixed to be used as a CMP solution. In this set, the slurry has a conductivity of 1 mS or below when the concentration of the tetravalent metal hydroxide is 1 mass%.

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