| 摘要 |
The oxidation of a lower electrode by the reaction between a metal element in the lower electrode and oxygen in a bonding layer is suppressed. The contamination of a semiconductor layer that is a photoelectric conversion layer by the diffusion of the metal element in the lower electrode into the semiconductor layer is suppressed. The invention relates to a photoelectric conversion device including a backside electrode layer, a crystalline semiconductor layer having a semiconductor junction, and a light-receiving-side electrode layer over a substrate having an insulating surface, in which the backside electrode layer has a stacked structure including a first conductive layer formed with a metal nitride or a refractory metal, a second conductive layer including aluminum (Al) or silver (Ag) as its main component, and a third conductive layer having low resistivity with a semiconductor material, and also relates to a manufacturing method thereof
|
