发明名称 |
High Temperature Boron Oxynitride Capacitor |
摘要 |
A method for storing energy in a capacitor includes connecting a first conductor to a first electrode and a second conductor to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron oxynitride, BON. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode by means of the first and second conductors.
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申请公布号 |
US2010157509(A1) |
申请公布日期 |
2010.06.24 |
申请号 |
US20080340665 |
申请日期 |
2008.12.20 |
申请人 |
INTEGRATED MICRO SENSORS INC. |
发明人 |
BADI NACER;BENSAOULA ABDELHAK |
分类号 |
H01G4/12;B05D5/12 |
主分类号 |
H01G4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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