发明名称 High Temperature Boron Oxynitride Capacitor
摘要 A method for storing energy in a capacitor includes connecting a first conductor to a first electrode and a second conductor to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron oxynitride, BON. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode by means of the first and second conductors.
申请公布号 US2010157509(A1) 申请公布日期 2010.06.24
申请号 US20080340665 申请日期 2008.12.20
申请人 INTEGRATED MICRO SENSORS INC. 发明人 BADI NACER;BENSAOULA ABDELHAK
分类号 H01G4/12;B05D5/12 主分类号 H01G4/12
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