发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SWITCH CIRCUIT
摘要 <p>A semiconductor device having a small leak current.  The semiconductor device is provided with: a plurality of ground side electrodes and plurality of signal side electrodes alternately arranged on a semiconductor substrate; a plurality of control electrodes provided between the ground side electrodes and the signal side electrodes, respectively; a ground side electrode connecting section connecting the ground side electrodes to each other; a signal side electrode connecting section which connects the signal side electrodes to each other; and a ground side lead-out line and a signal side lead-out line respectively extending from one end and other end of an electrode arranged section toward the outside of the electrode arranged section in the direction of arrangement of that section.  The plurality of ground side electrodes and plurality of signal side electrodes are arranged in that electrode arranged section in that direction.</p>
申请公布号 WO2010070824(A1) 申请公布日期 2010.06.24
申请号 WO2009JP06470 申请日期 2009.11.30
申请人 ADVANTEST CORPORATION;NAKANISHI, MAKOTO;YAMANOUCHI, TOMOO;OKAYASU, JUNICHI;SATO, TAKU;TERASAWA, DAIJU;TAKIKAWA, MASAHIKO 发明人 NAKANISHI, MAKOTO;YAMANOUCHI, TOMOO;OKAYASU, JUNICHI;SATO, TAKU;TERASAWA, DAIJU;TAKIKAWA, MASAHIKO
分类号 H01L27/095;H01L21/338;H01L21/8232;H01L27/06;H01L29/06;H01L29/778;H01L29/78;H01L29/812 主分类号 H01L27/095
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