BIPOLAR PUNCH-THROUGH SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE

摘要

A bipolar punch-through semiconductor device with a semiconductor substrate (1), which comprises at least a two-layer structure, one of the layers being a base layer (10) of the first conductivity type, is provided. The substrate comprises a first main side (11) with a first electrical contact (2) and a second main side (12) with a second electrical contact (3). A buffer layer (4) of the first conductivity type is arranged on the base layer (10). A first layer (5), which comprises alternately first regions (51, 51') of the first conductivity type and second regions (52, 52') of the second conductivity type, is arranged between the buffer layer (4) and the second electrical contact (3). The second regions (52, 52') are activated regions with a depth of at maximum 2 µm and a junction profile, which drops from 90 % to 10 % of the maximum doping concentration within at most 1 µm.