发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING METHOD, AND ELECTRONIC DEVICE
摘要 [PROBLEMS] To form a film enabling prevention of ion diffusion and having good adhesion to a glass substrate. [MEANS FOR SOLVING PROBLEMS] A semiconductor manufacturing apparatus comprises first introducing means for introducing a non-excited semiconductor gas into a chamber and a second introducing means for introducing an excited non-semiconductor gas into the chamber. The first introducing means has a first gas supply pipe extending from a cylinder in which the semiconductor gas is stored not through a remote plasma apparatus directly to the chamber. The second introducing means has a second gas supply pipe extending from a cylinder in which the non-semiconductor gas is stored through the remote plasma apparatus to the chamber.
申请公布号 KR20100069629(A) 申请公布日期 2010.06.24
申请号 KR20097021310 申请日期 2008.09.29
申请人 NANOMATERIAL LABORATORY CO., LTD. 发明人 SHIOYA YOSHIMI
分类号 H01L21/205;H05H1/34 主分类号 H01L21/205
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