发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
摘要 |
[PROBLEMS] To form a film enabling prevention of ion diffusion and having good adhesion to a glass substrate. [MEANS FOR SOLVING PROBLEMS] A semiconductor manufacturing apparatus comprises first introducing means for introducing a non-excited semiconductor gas into a chamber and a second introducing means for introducing an excited non-semiconductor gas into the chamber. The first introducing means has a first gas supply pipe extending from a cylinder in which the semiconductor gas is stored not through a remote plasma apparatus directly to the chamber. The second introducing means has a second gas supply pipe extending from a cylinder in which the non-semiconductor gas is stored through the remote plasma apparatus to the chamber.
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申请公布号 |
KR20100069629(A) |
申请公布日期 |
2010.06.24 |
申请号 |
KR20097021310 |
申请日期 |
2008.09.29 |
申请人 |
NANOMATERIAL LABORATORY CO., LTD. |
发明人 |
SHIOYA YOSHIMI |
分类号 |
H01L21/205;H05H1/34 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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