| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a replacement information memory element array, of which more substitute information can be held, as compared with conventional types and the defect relief rate of a nonvolatile semiconductor memory device is improved to contribute to the improvement of yield, and to provide a substitute information read-out device that uses the array. <P>SOLUTION: The substitute information memory element array is equipped with n pieces of word lines, corresponding to each bank of the nonvolatile semiconductor memory device, a plurality of bit lines and a plurality of memory elements. The memory elements are arranged on diagonal lines at intersections of the bit line and word line, while the bit line is charged for each word line. Word line drivers, gate circuits, sense amplifiers and control circuits are prepared respectively in two sets, to enable the substitute information to be simultaneously read out by both writing/erasing operation and reading operation of the nonvolatile semiconductor memory device, by using the substitute information memory element array. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
