| 发明名称 |
ETCHANT FOR SILICON SUBSTRATE, AND SURFACE PROCESSING METHOD FOR SILICON SUBSTRATE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an etchant with which an etching aqueous solution is prevented from changing in composition and a low reflectivity is effectively obtained inexpensively when pyramidal unevenness is formed on the surface of a silicon substrate for a solar cell by a wet etching process. <P>SOLUTION: The present invention relates to the etchant in which the silicon substrate is dipped to form the pyramidal unevenness uniformly on the substrate surface, the etchant comprising a solution containing: a compound (A) and a having one or more hydroxyl group in one molecule, and having a solubility parameter of 8.0 to 13.0 [cal/cm<SP>3</SP>]<SP>0.5</SP>and a boiling point of≥95°C under atmospheric pressure; and alkali hydroxide (B). <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010141139(A) |
申请公布日期 |
2010.06.24 |
| 申请号 |
JP20080316195 |
申请日期 |
2008.12.11 |
| 申请人 |
SHINRYO CORP |
发明人 |
SAWAI TAKESHI;SHIRAHAMA TOSHIKI;IWAKUMA FUJIKO |
| 分类号 |
H01L21/308;H01L21/306;H01L31/04 |
主分类号 |
H01L21/308 |
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