| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of reading nonvolatile semiconductor memory device, which accelerates reading by shortening a rise time of a word line voltage and has a sufficient margin for reading without increasing a layout area. <P>SOLUTION: In the method for reading the nonvolatile semiconductor storage device by supplying a voltage at a predetermined level to the word line, the voltage higher than the predetermined level is supplied to the word line to raise the word line voltage, and then the voltage at the predetermined level is supplied to the word line to set the word line voltage at the level for reading. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
