| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for manufacturing an epitaxial wafer that suppresses dislocation at a contact part between the epitaxial wafer and a susceptor, or the like. SOLUTION: Provided is the susceptor which is used for the device for manufacturing the epitaxial wafer which grows an epitaxial layer over a main surface of a silicon wafer substrate placed substantially horizontally, and also has thermal capacity such that when the epitaxial wafer is placed and the epitaxial wafer and susceptor at high temperatures which are high enough for dislocation are naturally cooled, the difference between a temperature of a contact part of an outer periphery of the epitaxial wafer and a temperature of a holding part of the susceptor supporting the epitaxial wafer in contact with the contact part is≤30°C at least for a predetermined period. COPYRIGHT: (C)2010,JPO&INPIT |
