| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor high in voltage resistance in on-operation. SOLUTION: This field effect transistor formed of a nitride-based compound semiconductor includes: a carrier traveling layer formed on a substrate; a carrier supply layer formed on the carrier traveling layer, having a conductivity type opposite to that of the carrier traveling layer, and separated by a recess part formed up to the depth reaching the carrier traveling layer; a source electrode and a drain electrode formed on the respective separated carrier supply layers by interposing the recess part; a gate insulating film formed to cover the surface of the carrier traveling layer in the recess part over the respective separated carrier supply layers; and a gate electrode formed on the gate insulating film in the recess part. The carrier supply layer on the source electrode side includes a source contact region located just below the source electrode, and a source electrode field relaxing region located under the gate electrode and low in carrier concentration relative to the source contact region. COPYRIGHT: (C)2010,JPO&INPIT |
