| 摘要 |
PROBLEM TO BE SOLVED: To suppress the film formation of B compound at the inner wall of a nozzle disposed, in a high-temperature region inside a processing chamber. SOLUTION: The method of manufacturing a semiconductor device includes a step of supplying, at the same time, a gas containing at least B as a constituent element and a gas containing at least Cl as a constituent element into the same gas supply nozzle 166 which is disposed in the processing chamber 201, and forming a B-doped silicon film, by supplying the gas so that the concentration of the Cl in the gas supply nozzle 166 becomes higher than that of B. COPYRIGHT: (C)2010,JPO&INPIT
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