| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose connection defect is suppressed. Ž<P>SOLUTION: The semiconductor device (100) includes a first interlayer insulating film (102) covering part of an insulating layer (125) and a semiconductor layer (126) and not covering a region of the insulating layer (125) above a lower electrode (142), a second interlayer insulating film (104) covering the insulating layer (125) and first interlayer insulating film (102), a source electrode (128) and a drain electrode (130) electrically connected to a source region and a drain region of the semiconductor layer (126) through a contact hole provided to the first interlayer insulating film (102) and second interlayer insulating film (104), and an upper electrode (144) made of the same material as that of the source electrode (128) and drain electrode (130) and electrically connected to a lower electrode (142) through a contact hole provided to the insulating layer (125) and second interlayer insulating film (104). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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