| 摘要 |
A method of producing a semiconductor apparatus, the method including forming metal ball bumps in direct contact with a circuit pattern of a semiconductor device, forming a resin film to seal spaces between the metal ball bumps, cleaning the surfaces of the metal ball bumps projecting out from the resin film using plasma cleaning by removing components inviting a rise in a connection resistance and a decline in a joint strength, forming eutectic solder layers different in composition from the metal ball bumps on the surfaces of the metal ball bumps, cutting the semiconductor substrate into unit semiconductor chips, and mounting at least one of the chips on a mounting board from a bump forming surface side of the chip so as to connect the eutectic solder layers to the mounting board with the resin film directly contacting the chip and not directly contacting the mounting board.
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