| 摘要 |
A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises applying a biasing voltage from an emitter-follower circuit to a device under test (DUT); inducing said changes in the DUT; and measuring a voltage change in a collector portion of the emitter-follower circuit as a measure for said changes.
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