NONVOLATILE PROGRAMMABLE SWITCH DEVICE AND FABRICATING METHOD THEREOF
摘要
<p>PURPOSE: A nonvolatile programmable switch device and a method for manufacturing the same are provided to reduce an area in which the device is occupied by maintaining the property of the programmable switch device without a static random access memory device. CONSTITUTION: A first electrode(102) is formed on a semiconductor substrate(100). An insulating layer(104) comprises a contact hole(106) which exposes a part of the first electrode. A heat-generating electrode(108) is buried in the contact hole. A phase-changing layer(118) is formed on the heat-generating electrode. A metal layer(112) is contacted with both sides of the phase-changing layer. A second electrode(130) is connected to the phase-changing layer.</p>
申请公布号
KR20100068794(A)
申请公布日期
2010.06.24
申请号
KR20080127270
申请日期
2008.12.15
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
PARK, YOUNG SAM;LEE, SEUNG YUN;YOON, SUNG MIN;JUNG, SOON WON;YU, BYOUNG GON