发明名称 NONVOLATILE PROGRAMMABLE SWITCH DEVICE AND FABRICATING METHOD THEREOF
摘要 <p>PURPOSE: A nonvolatile programmable switch device and a method for fabricating the same are provided to improve the retention property of the device by separately forming a first electrode and a second electrode for reading, and a third electrode and a fourth electrode for writing. CONSTITUTION: A first electrode(102) is formed on a semiconductor substrate(100). Insulating layers(104a, 108a) comprise pores(110) which expose a part of the first electrode. A heat-generating electrode(106a) is formed on the lateral side of the pores. A phase-changing layer(112) is connected to the first electrode. A second electrode is connected to the phase-changing layer. A third electrode(122) is connected to one side of the heat-generating electrode. A fourth electrode(126) is connected to another side of the heat-generating electrode.</p>
申请公布号 KR20100068793(A) 申请公布日期 2010.06.24
申请号 KR20080127269 申请日期 2008.12.15
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 PARK, YOUNG SAM;LEE, SEUNG YUN;YOON, SUNG MIN;JUNG, SOON WON;YU, BYOUNG GON
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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