METHOD FOR MANUFACTURING DIFFUSED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a diffused wafer capable of suppressing variations in the film thickness of a non-diffused layer by optimizing a preceding extracting-evaluation by SR method before polishing.

SOLUTION: The method for manufacturing a diffused wafer is characterized in that it comprises: a first diffusing step for diffusing impurities to a semiconductor wafer and a surface-resistive monitor wafer; a second step for diffusing additionally impurities in the depth direction; a step for evaluating a surface-resistance of the surface-resistive monitor wafer; a determining step for determining the number of extracted wafers for calculating a correction value based on the evaluating result; a first measuring step for measuring a thickness of non-diffused layer of the wafer for calculating a correction value by using FT-IR method; a second measuring step for measuring a thickness of non-diffused layer of the wafer for calculating a correction value by using SR method; a step for calculating a correction value between both of measuring results based on them; and a polishing step for polishing the non-diffused layer of the semiconductor wafer, while monitoring an amount of polishing by using measurement of the thickness of non-diffused layer by FT-IR method and the correction value.

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