| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with low on-state loss and high SOA (safe operation area) capability. <P>SOLUTION: A first oxide layer 22 is produced on a first main side of a substrate 1 of a first conductivity type. Gate electrode layers 3 and 3' with at least one opening 31 are formed on the top of the first oxide layer 22. A first dopant of the first conductivity type is implanted into the substrate 1 on the first main side with the gate electrode layers 3 and 3' as a mask and is diffused into the substrate 1 to form an enhancement layer. Thereafter, a second dopant of a second conductivity type is implanted into the substrate 1 on the first main side and is diffused into the substrate 1 to form a base layer. After diffusing the first dopant into the substrate 1 and before implanting the second dopant into the substrate 1, the first oxide layer 22 is partially removed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
