| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having a gate insulating film which has a high relative dielectric constant and can lower a threshold voltage or operating voltage even when using a substrate made of an organic material such as plastic, and to provide a method of manufacturing the same. SOLUTION: The thin film transistor 10 includes: an active layer 6 formed of a semiconductor material; a source electrode 4 coupled to the active layer 6; a drain electrode 5 coupled to the active layer 6 and electrically connected to the source electrode 4 through the active layer 6; the gate insulating film 3 coupled to the active layer and formed by laminating a plurality of layers in which an organic polymeric material layer and an inorganic compound layer is mixed; and a gate electrode 2 formed in contact with the gate insulating film 3 to form a channel region in the active layer 6 via the gate insulating film 3. COPYRIGHT: (C)2010,JPO&INPIT
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